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NDF02N60Z, NDD02N60Z
N-Channel Power MOSFET
600 V, 4.8 W
Features
? Low ON Resistance
? Low Gate Charge
? ESD Diode ? Protected Gate
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
V DSS
600 V
http://onsemi.com
R DS(on) (MAX) @ 1 A
4.8 W
Rating
Drain ? to ? Source Voltage
Continuous Drain Current R q JC
(Note 1)
Continuous Drain Current R q JC
T A = 100 ° C (Note 1)
Pulsed Drain Current, V GS @ 10 V
Power Dissipation R q JC
Gate ? to ? Source Voltage
Symbol
V DSS
I D
I D
I DM
P D
V GS
NDF
2.4
1.6
10
24
600
± 30
NDD
2.2
1.4
9
57
Unit
V
A
A
A
W
V
G (1)
N ? Channel
D (2)
S (3)
Single Pulse Avalanche Energy,
I D = 2.4 A
ESD (HBM)
(JESD 22 ? A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T A = 25 ° C) (Figure 17)
Peak Diode Recovery (Note 2)
E AS
V esd
V ISO
dv/dt
120
2500
4500
4.5
mJ
V
V
V/ns
3
3
Continuous Source Current (Body
Diode)
Maximum Temperature for Soldering
Leads
Operating Junction and
I S
T L
T J , T stg
2.4
260
? 55 to 150
A
° C
° C
1
2
NDF02N60ZG
TO ? 220FP
CASE 221D
1
2
NDF02N60ZH
TO ? 220FP
CASE 221AH
Storage Temperature Range
3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I SD = 2.4 A, di/dt ≤ 100 A/ m s, V DD ≤ BV DSS , T J = +150 ° C
4
1
2
NDD02N60Z ? 1G
IPAK
CASE 369D
4
1 2
3
NDD02N60ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 7 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
July, 2013 ? Rev. 7
1
Publication Order Number:
NDF02N60Z/D
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